This title appears in the Scientific Report :
2018
Please use the identifier:
http://hdl.handle.net/2128/19302 in citations.
Confinement of charge carriers in GeSn/SiGeSn heterostructures
Confinement of charge carriers in GeSn/SiGeSn heterostructures
In this work, we discuss carrier confinement in double heterostructures and multiple quantum well GeSn/(Si)Ge(Sn) heterostructures, aiming for efficient light emitting devices. Several heterostructures are ep-itaxially grown and characterized in detail concerning their structural and optical propert...
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Personal Name(s): | Rainko, Denis (Corresponding author) |
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von den Driesch, Nils / Stange, Daniela / Schulte-Braucks, Christian / Mussler, Gregor / Povstugar, Ivan / Breuer, Uwe / Zaumseil, Peter / Capellini, Giovanni / Hartmann, Jean-Michel / Ikonic, Zoran / Mantl, Siegfried / Grützmacher, Detlev / Buca, Dan Mihai | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 Analytik; ZEA-3 JARA-FIT; JARA-FIT |
Imprint: |
2017
|
Conference: | The 10th International Conference on Silicon Epitaxy and heterostructures, Warwick (United Kingdom), 2017-05-14 - 2017-05-19 |
Document Type: |
Abstract |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
In this work, we discuss carrier confinement in double heterostructures and multiple quantum well GeSn/(Si)Ge(Sn) heterostructures, aiming for efficient light emitting devices. Several heterostructures are ep-itaxially grown and characterized in detail concerning their structural and optical properties. Theoretical band structure calculations are used to support exper-imental data and provide predictions for optimized heterostructures. |