This title appears in the Scientific Report :
2018
Please use the identifier:
http://hdl.handle.net/2128/19305 in citations.
Epitaxy and design of GeSn/SiGeSn heterstructure LEDs
Epitaxy and design of GeSn/SiGeSn heterstructure LEDs
Since the first report on lasing from GeSn/Ge/Si [1], optically-pumped lasing has been demonstrated from GeSn heterostructures with maximum Sn contents of 17.5 at. % and operating temperatures up to 180 K, thus paving the way for the use of GeSn in monolithically grown group IV optoelectronic device...
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Personal Name(s): | Rainko, Denis (Corresponding author) |
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von den Driesch, Nils / Stange, Daniela / Mussler, Gregor / Breuer, Uwe / Hartmann, Jean-Michel / Zaumseil, Peter / Capellini, Giovanni / Ikonic, Zoran / Mantl, Siegfried / Grützmacher, Detlev / Buca, Dan Mihai | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 Analytik; ZEA-3 JARA-FIT; JARA-FIT |
Imprint: |
2018
|
Conference: | 9th International SiGe Technology and Device Meeting (ISTDM) 11th International Conference on Silicon Epitaxy and Heterostructures (ICSI), Potsdam (Germany), 2018-05-27 - 2018-05-31 |
Document Type: |
Abstract |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Since the first report on lasing from GeSn/Ge/Si [1], optically-pumped lasing has been demonstrated from GeSn heterostructures with maximum Sn contents of 17.5 at. % and operating temperatures up to 180 K, thus paving the way for the use of GeSn in monolithically grown group IV optoelectronic devices [2,3,4].In line with the development of III-V lasers since the sixties, the next logical step is to use hetero- and nanostructures to enhance radiative processes occurring in the active regions [5]. Along this line, we have recently demonstrated the increase of optical output brought about by the use of SiGeSn/GeSn multi quantum well (MQW) LEDs [6]. Though far from being optimized in respect to carrier confinement, optically pumped lasing was demonstrated from undoped, direct bandgap heterostructures for the first time in 2017 [6].Several hurdles have to be overcome in order to demonstrate an electrically pumped laser. On one hand, higher Sn concentrations (and high Si contents, in cladding layers) have to be achieved, to increase the “directness” of the active material and the confinement of charge carriers in heterostructures. Here, it is also necessary to choose the material parameters carefully, designing an “ideal” strain-balanced device. On the other hand, electrical contacts have to be designed in a way that enables efficient charge carrier injection and preserves the lasing mode confinement.This contribution discusses the epitaxial growth of direct bandgap GeSn/SiGeSn LED structures via reduced-pressure CVD. Moreover, using 8 band k∙p calculations, material design of GeSn/SiGeSn MQWs will be discussed to find an optimal parameter space in terms of carrier confinement. |