This title appears in the Scientific Report :
2018
Please use the identifier:
http://dx.doi.org/10.1063/1.4996109 in citations.
Please use the identifier: http://hdl.handle.net/2128/19399 in citations.
Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors
Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors
The benefits of a gate-normal tunneling architecture in enhancing the on-current and average subthreshold swing of tunneling field-effect transistors were scrutinized in experiment through careful physical analysis of a Si0.50Ge0.50/Si heterostructure. In accordance with theoretical predictions, it...
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Personal Name(s): | Glass, S. (Corresponding author) |
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von den Driesch, N. / Strangio, S. / Schulte-Braucks, C. / Rieger, T. / Narimani, K. / Buca, D. / Mantl, S. / Zhao, Q. T. | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Applied physics letters, 111 (2017) 26, S. 263504 - |
Imprint: |
Melville, NY
American Inst. of Physics
2017
|
DOI: |
10.1063/1.4996109 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
Published on 2017-12-27. Available in OpenAccess from 2018-12-27. |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/19399 in citations.
The benefits of a gate-normal tunneling architecture in enhancing the on-current and average subthreshold swing of tunneling field-effect transistors were scrutinized in experiment through careful physical analysis of a Si0.50Ge0.50/Si heterostructure. In accordance with theoretical predictions, it is confirmed that the on-current is governed by line tunneling scaling with the source-gate overlap area of our devices. Our analysis identifies the early onset of parasitic diagonal tunneling paths as most detrimental for a low average subthreshold swing. By counter doping the channel, this onset can be shifted favorably, permitting low average subthreshold swings down to 87 mV/dec over four decades of drain current and high on-off current ratios exceeding 106. |