This title appears in the Scientific Report :
2018
Please use the identifier:
http://dx.doi.org/10.1088/1361-6641/aa95d3 in citations.
Optical critical points of Si x Ge 1− x − y Sn y alloys with high Si content
Optical critical points of Si x Ge 1− x − y Sn y alloys with high Si content
We extend the analysis of optical transition energies above 1.5 eV in ternary Si x Ge1−x−y Sn y alloys grown by molecular beam epitaxy to a composition range in which 1−x−y is as low as 0.405. Simple models for transition energies assume a quadratic dependence on material content. Comparing our resu...
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Personal Name(s): | Fischer, Inga A (Corresponding author) |
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Berrier, Audrey / Hornung, Florian / Oehme, Michael / Zaumseil, Peter / Capellini, Giovanni / von den Driesch, Nils / Buca, Dan Mihai / Schulze, Jörg | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Semiconductor science and technology, 32 (2017) 12, S. 124004 - |
Imprint: |
Bristol
IOP Publ.
2017
|
DOI: |
10.1088/1361-6641/aa95d3 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
We extend the analysis of optical transition energies above 1.5 eV in ternary Si x Ge1−x−y Sn y alloys grown by molecular beam epitaxy to a composition range in which 1−x−y is as low as 0.405. Simple models for transition energies assume a quadratic dependence on material content. Comparing our results to existing predictions of the transition energies based on results obtained from samples with much lower Si and Sn content, however, we find a significant disagreement between experiment and theory, indicating that the assumption of a quadratic dependence might not be valid for the entire composition range of the ternary alloy. |