This title appears in the Scientific Report :
2018
Please use the identifier:
http://dx.doi.org/10.1038/s41467-018-05823-z in citations.
Please use the identifier: http://hdl.handle.net/2128/22663 in citations.
Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping prod...
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Personal Name(s): | Nemšák, Slavomír (Corresponding author) |
---|---|
Gehlmann, Mathias / Kuo, Cheng-Tai / Lin, Shih-Chieh / Schlueter, Christoph / Mlynczak, Ewa / Lee, Tien-Lin / Plucinski, Lukasz / Ebert, Hubert / Di Marco, Igor / Minár, Ján / Schneider, Claus M. / Fadley, Charles S. | |
Contributing Institute: |
Elektronische Eigenschaften; PGI-6 |
Published in: | Nature Communications, 9 (2018) 1, S. 3306 |
Imprint: |
London
Nature Publishing Group
2018
|
DOI: |
10.1038/s41467-018-05823-z |
PubMed ID: |
30120237 |
Document Type: |
Journal Article |
Research Program: |
Controlling Spin-Based Phenomena |
Link: |
Get full text Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/22663 in citations.
The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials. |