This title appears in the Scientific Report :
2018
Please use the identifier:
http://dx.doi.org/10.1063/1.5036728 in citations.
Please use the identifier: http://hdl.handle.net/2128/19603 in citations.
The thermal stability of epitaxial GeSn layers
The thermal stability of epitaxial GeSn layers
We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by...
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Personal Name(s): | Zaumseil, P. |
---|---|
Hou, Y. / Schubert, M. A. / von den Driesch, N. / Stange, D. / Rainko, D. / Virgilio, M. / Buca, D. / Capellini, G. (Corresponding author) | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | APL materials, 6 (2018) 7, S. 076108 |
Imprint: |
Melville, NY
AIP Publ.
2018
|
DOI: |
10.1063/1.5036728 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/19603 in citations.
We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by a sudden Sn segregation, resulting in the separation of a β-Sn phase. In pseudomorphic samples, a slower segregation process progressively leads to the accumulation of Sn at the surface only. The different behaviors are explained by the role of dislocations in the Sn diffusion process. The positive impact of annealing on optical emission is also discussed. |