This title appears in the Scientific Report :
2018
Please use the identifier:
http://hdl.handle.net/2128/19736 in citations.
Please use the identifier: http://dx.doi.org/10.1038/s41535-018-0116-1 in citations.
In situ disentangling surface state transport channels of a topological insulator thin film by gating
In situ disentangling surface state transport channels of a topological insulator thin film by gating
In the thin film limit, the surface state of a three-dimensional topological insulator gives rise to two parallel conduction channels at the top and bottom surface of the film, which are difficult to disentangle in transport experiments. Here, we present gate-dependent multi-tip scanning tunneling m...
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Personal Name(s): | Lüpke, Felix |
---|---|
Just, Sven / Eschbach, Markus / Heider, Tristan / Młyńczak, Ewa / Lanius, Martin / Schüffelgen, Peter / Rosenbach, Daniel / von den Driesch, Nils / Cherepanov, Vasily / Mussler, Gregor / Plucinski, Lukasz / Grützmacher, Detlev / Schneider, Claus M. / Tautz, F. Stefan / Voigtländer, Bert (Corresponding author) | |
Contributing Institute: |
Quantum Nanoscience; PGI-3 JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Simulation Sciences; JARA-SIM Elektronische Eigenschaften; PGI-6 Halbleiter-Nanoelektronik; PGI-9 |
Published in: | npj quantum materials, 3 (2018) 1, S. 46 |
Imprint: |
[London]
Nature Publishing Group
2018
|
DOI: |
10.1038/s41535-018-0116-1 |
Document Type: |
Journal Article |
Research Program: |
Controlling Spin-Based Phenomena |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1038/s41535-018-0116-1 in citations.
In the thin film limit, the surface state of a three-dimensional topological insulator gives rise to two parallel conduction channels at the top and bottom surface of the film, which are difficult to disentangle in transport experiments. Here, we present gate-dependent multi-tip scanning tunneling microscope transport measurements combined with photoemission experiments all performed in situ on pristine BiSbTe<sub>3</sub> thin films. To analyze the data, we develop a generic transport model including quantum capacitance effects. This approach allows us to quantify the gate-dependent conductivities, charge carrier concentrations, and mobilities for all relevant transport channels of three-dimensional topological insulator thin films (i.e., the two topological surface state channels, as well as the interior of the film). For the present sample, we find that the conductivity in the bottom surface state channel is minimized below a gate voltage of V<sub>gate</sub> = −34 V and the top surface state channel dominates the transport through the film. |