This title appears in the Scientific Report :
2018
Please use the identifier:
http://hdl.handle.net/2128/19848 in citations.
Please use the identifier: http://dx.doi.org/10.3390/nano8110869 in citations.
Au Nanoparticles as Template for Defect Formation in Memristive SrTiO3 Thin Films
Au Nanoparticles as Template for Defect Formation in Memristive SrTiO3 Thin Films
We investigated the possibility of tuning the local switching properties of memristive crystalline SrTiO 3 thin films by inserting nanoscale defect nucleation centers. For that purpose, we employed chemically-synthesized Au nanoparticles deposited on 0.5 wt%-Nb-doped SrTiO 3 single crystal substrate...
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Personal Name(s): | Raab, Nicolas |
---|---|
Schmidt, D. O. / Du, Hongchu / Kruth, Maximilian / Simon, U. / Dittmann, Regina (Corresponding author) | |
Contributing Institute: |
Elektronische Materialien; PGI-7 Materialwissenschaft u. Werkstofftechnik; ER-C-2 JARA-FIT; JARA-FIT |
Published in: | Nanomaterials, 8 (2018) 11, S. 869 |
Imprint: |
Basel
MDPI
2018
|
DOI: |
10.3390/nano8110869 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.3390/nano8110869 in citations.
We investigated the possibility of tuning the local switching properties of memristive crystalline SrTiO 3 thin films by inserting nanoscale defect nucleation centers. For that purpose, we employed chemically-synthesized Au nanoparticles deposited on 0.5 wt%-Nb-doped SrTiO 3 single crystal substrates as a defect formation template for the subsequent growth of SrTiO 3 . We studied in detail the resulting microstructure and the local conducting and switching properties of the SrTiO 3 thin films. We revealed that the Au nanoparticles floated to the SrTiO 3 surface during growth, leaving behind a distorted thin film region in their vicinity. By employing conductive-tip atomic force microscopy, these distorted SrTiO 3 regions are identified as sites of preferential resistive switching. These findings can be attributed to the enhanced oxygen exchange reaction at the surface in these defective regions |