This title appears in the Scientific Report :
2018
Please use the identifier:
http://dx.doi.org/10.1021/acs.nanolett.8b03508 in citations.
Liquid-Gated Two-Layer Silicon Nanowire FETs: Evidence of Controlling Single-Trap Dynamic Processes523
Liquid-Gated Two-Layer Silicon Nanowire FETs: Evidence of Controlling Single-Trap Dynamic Processes523
We fabricate two-layer (TL) silicon nanowires (NW) field-effect transistors (FETs) with a liquid gate. The NW devices show advanced characteristics, which reflect reliable single-electron phenomena. A strong modulation effect of channel conductivity with effectively tuned parameters is revealed. The...
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Personal Name(s): | Kutovyi, Yurii |
---|---|
Zadorozhnyi, Ihor / Handziuk, Volodymyr / Hlukhova, Hanna / Boichuk, Nazarii / Petrychuk, Mykhaylo / Vitusevich, Svetlana (Corresponding author) | |
Contributing Institute: |
Bioelektronik; ICS-8 |
Published in: | Nano letters, 18 (2018) 11, S. 7305 - 7313 |
Imprint: |
Washington, DC
ACS Publ.
2018
|
DOI: |
10.1021/acs.nanolett.8b03508 |
PubMed ID: |
30346789 |
Document Type: |
Journal Article |
Research Program: |
Controlling Configuration-Based Phenomena |
Publikationsportal JuSER |
We fabricate two-layer (TL) silicon nanowires (NW) field-effect transistors (FETs) with a liquid gate. The NW devices show advanced characteristics, which reflect reliable single-electron phenomena. A strong modulation effect of channel conductivity with effectively tuned parameters is revealed. The effect opens up prospects for applications in several research fields including bioelectronics and sensing applications. Our results shed light on the nature of single trap dynamics which parameters can be fine-tuned to enhance the sensitivity of liquid-gated TL silicon nanowire FETs. |