This title appears in the Scientific Report :
2018
Please use the identifier:
http://dx.doi.org/10.1021/acsphotonics.8b01116 in citations.
GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers
GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers
GeSn and SiGeSn are promising materials for the fabrication of a group IV laser source offering a number of design options from bulk to heterostructures and quantum wells. Here, we investigate GeSn/SiGeSn multi quantum wells using the optically pumped laser effect. Three complex heterostructures wer...
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Personal Name(s): | Stange, Daniela (Corresponding author) |
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von den Driesch, Nils / Zabel, Thomas / Armand-Pilon, Francesco / Rainko, Denis / Marzban, Bahareh / Zaumseil, Peter / Hartmann, Jean-Michel / Ikonic, Zoran / Capellini, Giovanni / Mantl, Siegfried / Sigg, Hans / Witzens, Jeremy / Grützmacher, Detlev / Buca, Dan Mihai | |
Contributing Institute: |
JARA Institut Green IT; PGI-10 JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | ACS photonics, 5 (2018) 11, S. 4628 - 4636 |
Imprint: |
Washington, DC
ACS
2018
|
DOI: |
10.1021/acsphotonics.8b01116 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
GeSn and SiGeSn are promising materials for the fabrication of a group IV laser source offering a number of design options from bulk to heterostructures and quantum wells. Here, we investigate GeSn/SiGeSn multi quantum wells using the optically pumped laser effect. Three complex heterostructures were grown on top of 200 nm thick strain-relaxed Ge0.9Sn0.1 buffers. The lasing is investigated in terms of threshold and maximal lasing operation temperature by comparing multiple quantum well to double heterostructure samples. Pumping under two different wavelengths of 1064 and 1550 nm yields comparable lasing thresholds. The design with multi quantum wells reduces the lasing threshold to 40 ± 5 kW/cm2 at 20 K, almost 10 times lower than for bulk structures. Moreover, 20 K higher maximal lasing temperatures were found for lower energy pumping of 1550 nm. |