This title appears in the Scientific Report :
2018
Please use the identifier:
http://dx.doi.org/10.1103/PhysRevB.97.155149 in citations.
Please use the identifier: http://hdl.handle.net/2128/21333 in citations.
Electronic structure of the dilute magnetic semiconductor G a 1 − x M n x P from hard x-ray photoelectron spectroscopy and angle-resolved photoemission
Electronic structure of the dilute magnetic semiconductor G a 1 − x M n x P from hard x-ray photoelectron spectroscopy and angle-resolved photoemission
We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about...
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Personal Name(s): | Keqi, A. |
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Gehlmann, M. / Conti, G. / Nemsak, Slavomir (Corresponding author) / Rattanachata, A. / Minár, J. / Plucinski, L. / Rault, J. E. / Rueff, J. P. / Scarpulla, M. / Hategan, M. / Pálsson, G. K. / Conlon, C. / Eiteneer, D. / Saw, A. Y. / Gray, A. X. / Kobayashi, K. / Ueda, S. / Dubon, O. D. / Schneider, C. M. / Fadley, C. S. | |
Contributing Institute: |
Elektronische Eigenschaften; PGI-6 |
Published in: | Physical Review B Physical review / B, 97 97 (2018 2018) 15 15, S. 155149 155149 |
Imprint: |
Woodbury, NY
Inst.
2018
|
DOI: |
10.1103/PhysRevB.97.155149 |
Document Type: |
Journal Article |
Research Program: |
Controlling Spin-Based Phenomena |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/21333 in citations.
We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of Ga0.97Mn0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012)], demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP. |