This title appears in the Scientific Report :
2018
Please use the identifier:
http://dx.doi.org/10.1016/j.apsusc.2018.02.091 in citations.
The influence of Si in Ni on the interface modification and the band alignment between Ni and alumina
The influence of Si in Ni on the interface modification and the band alignment between Ni and alumina
The influence of a small amount of Si in a Ni single crystal on the interface formation between aluminum oxide and Ni has been investigated. The interface was formed by in-situ growth of the oxide by simultaneous supply of Al and oxygen onto Ni(1 1 1) in an ultrahigh vacuum chamber equipped with XPS...
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Personal Name(s): | Yoshitake, Michiko (Corresponding author) |
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Nemsak, Slavomir / Skála, Tomáš / Tsud, Nataliya / Matolín, Vladimír / Prince, Kevin C. | |
Contributing Institute: |
Elektronische Eigenschaften; PGI-6 |
Published in: | Applied surface science, 442 (2018) S. 164 - 169 |
Imprint: |
Amsterdam
Elsevier
2018
|
DOI: |
10.1016/j.apsusc.2018.02.091 |
Document Type: |
Journal Article |
Research Program: |
Controlling Spin-Based Phenomena |
Publikationsportal JuSER |
The influence of a small amount of Si in a Ni single crystal on the interface formation between aluminum oxide and Ni has been investigated. The interface was formed by in-situ growth of the oxide by simultaneous supply of Al and oxygen onto Ni(1 1 1) in an ultrahigh vacuum chamber equipped with XPS apparatus. The oxide growth and the interface formation were compared between Si-containing Ni(1 1 1) and pure Ni(1 1 1). It was revealed that Si segregated on the surface of Ni and oxidized, forming an epitaxial thin alumino-silicate film. Valence band spectra demonstrated that the band offset between the oxide and Ni (energy level difference between the valence band top and the Fermi level) is different due to the oxidized Si segregation at the interface. |