This title appears in the Scientific Report :
2018
Resistive switching memory devices from atomic layer deposited binary and ternary oxide thin films
Resistive switching memory devices from atomic layer deposited binary and ternary oxide thin films
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Personal Name(s): | Aslam, Nabeel (Corresponding author) |
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Contributing Institute: |
JARA-FIT; JARA-FIT Elektronische Materialien; PGI-7 |
Imprint: |
2017
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Physical Description: |
100 |
Dissertation Note: |
Dissertation, RWTH Aachen, 2017 |
ISBN: |
978-3-95806-274-0 |
Document Type: |
Book Dissertation / PhD Thesis |
Research Program: |
Controlling Collective States |
Publikationsportal JuSER |
Description not available. |