This title appears in the Scientific Report :
2018
Please use the identifier:
http://dx.doi.org/10.1109/MCAS.2018.2821760 in citations.
Exploring the Dynamics of Real-World Memristors on the Basis of Circuit Theoretic Model Predictions
Exploring the Dynamics of Real-World Memristors on the Basis of Circuit Theoretic Model Predictions
The memristor represents the key circuit element for the development of the constitutive blocks of future non-volatile memory architectures and neuromorphic systems. However, resistance switching memories offer a plethora of further opportunities for the electronics of the future. By virtue of the c...
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Personal Name(s): | Ascoli, A. |
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Tetzlaff, R. / Menzel, S. | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA-FIT; JARA-FIT |
Published in: | IEEE circuits and systems magazine, 18 (2018) 2, S. 48 - 76 |
Imprint: |
New York, NY
IEEE
2018
|
DOI: |
10.1109/MCAS.2018.2821760 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
The memristor represents the key circuit element for the development of the constitutive blocks of future non-volatile memory architectures and neuromorphic systems. However, resistance switching memories offer a plethora of further opportunities for the electronics of the future. By virtue of the compatibility between the well-established CMOS technology and the fabrication process of most memristors, the exploitation of the peculiar dynamic behaviour of resistance switching memories, which, in general, differ depending upon their material composition, may allow the development of new circuits, which, processing information in unconventional forms, may extend and/or complement the functionalities of state-of-the-art electronic systems. Further, the attractive capability of real-world non-volatile memristors to store and process information in the same physical nanoscale location open the fascinating opportunity to improve the low throughput of Von Neumann computing machines, due to the limited bandwidth of the bus transferring data between the memory and the central processing unit. Finally, the extreme sensitivity of their electrical behaviour to small changes in their initial condition/input and the intrinsic stochastic variability in their switching dynamics may be harnessed to develop innovative bio-signal sensors as well as new cryptographic circuits and systems. The derivation of accurate mathematical models for the electrical behaviour of real-world memristor nano-devices, and their later circuit- and system-theoretic investigation aimed at drawing a comprehensive picture of their peculiar nonlinear dynamic behaviour under the set of inputs and initial conditions expected of the application of interest are fundamental steps towards their conscious future use in integrated circuit design. With this in mind, the present paper adopts a powerful theoretic tool known as Dynamic Route Map to analyse some of the most reliable physics-based models of real-world resi... |