This title appears in the Scientific Report :
2019
Please use the identifier:
http://dx.doi.org/10.1109/TED.2018.2863727 in citations.
Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors531
Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors531
The subthreshold behavior of floating-gate MOSFETs connected with ferroelectric capacitors (FeCs) was investigated experimentally and theoretically. We found that the subthreshold swing (SS) decreases with decreasing ferroelectric capacitance (i.e., with the decreasing FeC area), in contrast to the...
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Personal Name(s): | Han, Qinghua |
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Tromm, Thomas C. U. / Hoffmann, Michael / Aleksa, Paulus / Schroeder, Uwe / Schubert, Juergen / Mantl, Siegfried / Zhao, Qing-Tai (Corresponding author) | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 JARA-FIT; JARA-FIT |
Published in: | IEEE transactions on electron devices, 65 (2018) 10, S. 4641 - 4645 |
Imprint: |
New York, NY
IEEE
2018
|
DOI: |
10.1109/TED.2018.2863727 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
The subthreshold behavior of floating-gate MOSFETs connected with ferroelectric capacitors (FeCs) was investigated experimentally and theoretically. We found that the subthreshold swing (SS) decreases with decreasing ferroelectric capacitance (i.e., with the decreasing FeC area), in contrast to the voltage dividing effect of regular dielectric capacitors. The ferroelectric polarization switching counteracts the effect of voltage dividing by introducing an additional charge onto the floating gate, which improves the SS and leads to the observed SS dependence. The SS improvement caused by the polarization switching is different from the negative capacitance effect, which is helpful to further understand the ferroelectric transistor. |