This title appears in the Scientific Report :
2019
Please use the identifier:
http://dx.doi.org/10.1109/TED.2019.2892997 in citations.
Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices
Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices
Physics-based compact models for redox-based resistive switching memory (ReRAM) devices are used to increase the physical understanding of the complex switching process as well as to allow for accurate circuit simulations. This includes that models have to cover devices showing bipolar switching (BS...
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Personal Name(s): | La Torre, Camilla (Corresponding author) |
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Zurhelle, Alexander F. / Breuer, Thomas / Waser, R. / Menzel, Stephan | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA Institut Green IT; PGI-10 JARA-FIT; JARA-FIT |
Published in: | IEEE transactions on electron devices, 66 (2019) 3, S. 1268 - 1275 |
Imprint: |
New York, NY
IEEE
2019
|
DOI: |
10.1109/TED.2019.2892997 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
Physics-based compact models for redox-based resistive switching memory (ReRAM) devices are used to increase the physical understanding of the complex switching process as well as to allow for accurate circuit simulations. This includes that models have to cover devices showing bipolar switching (BS) and complementary switching (CS). In contrast to BS devices, which store the information in (at least) one high and one low resistance state, CS devices use (at least) two high resistance states. Applications of CS devices range from passive crossbar arrays to novel logic-in-memory concepts. The coexistence of CS and BS modes in one device has been shown experimentally. Here, a physics-based compact model describing BS and CS consistently is presented. Besides modeling CS devices, the model improves the description of BS as it allows to reproduce and explain anomalies in the BS RESET process. The model includes ion drift and diffusion along the filament. The influence of different parameters on the drift–diffusion balance is discussed. |