This title appears in the Scientific Report :
2019
Please use the identifier:
http://dx.doi.org/10.1016/j.mee.2019.110992 in citations.
Determination of energy thresholds of electron excitations at semiconductor/insulator interfaces using trap-related displacement currents
Determination of energy thresholds of electron excitations at semiconductor/insulator interfaces using trap-related displacement currents
Spectral measurements of illumination-induced displacement currents related to trapping of charge carriers optically excited in semiconductor electrodes are shown to deliver information regarding energy onsets of electron transitions at the interface. Presented examples include determination of the...
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Personal Name(s): | Afanas'ev, V. V. (Corresponding author) |
---|---|
Schubert, J. / Neft, A. / Delie, G. / Shlyakhov, I. / Trepalin, V. / Houssa, M. / Stesmans, A. | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Microelectronic engineering, 215 (2019) S. 110992 - |
Imprint: |
[S.l.] @
Elsevier
2019
|
DOI: |
10.1016/j.mee.2019.110992 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
Spectral measurements of illumination-induced displacement currents related to trapping of charge carriers optically excited in semiconductor electrodes are shown to deliver information regarding energy onsets of electron transitions at the interface. Presented examples include determination of the conduction band offset at the GaN/Al2O3 interface and determination of charge carrier excitation spectra of two-dimensional (2D) semiconductors MoS2 and WS2 at the interface with insulating SiO2. |