This title appears in the Scientific Report :
2019
Please use the identifier:
http://dx.doi.org/10.1016/j.sse.2019.03.037 in citations.
Transient negative capacitance and charge trapping in FDSOI MOSFETs with ferroelectric HfYOX
Transient negative capacitance and charge trapping in FDSOI MOSFETs with ferroelectric HfYOX
Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. The negative capacitance is believed to be a transient phenomenon because a strong polarization switching is needed fo...
Saved in:
Personal Name(s): | Han, Qinghua |
---|---|
Aleksa, Paulus / Tromm, Thomas Carl Ulrich / Schubert, Jürgen / Mantl, Siegfried / Zhao, Qing-Tai (Corresponding author) | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Solid state electronics, 159 (2019) S. 71 - 76 |
Imprint: |
Oxford [u.a.]
Pergamon, Elsevier Science
2019
|
DOI: |
10.1016/j.sse.2019.03.037 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. The negative capacitance is believed to be a transient phenomenon because a strong polarization switching is needed for the steep slope. We found that the sub-thermal SS degrades with the cycling measurements, which is assumed to be caused by the trap charging in the ferroelectric oxide layer. The tradeoff between polarization and charge trapping is responsible for the subthreshold behavior of the device. |