This title appears in the Scientific Report :
2019
Please use the identifier:
http://hdl.handle.net/2128/22683 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.5103244 in citations.
Self-assembly and properties of domain walls in BiFeO3 layers grown via molecular-beam epitaxy
Self-assembly and properties of domain walls in BiFeO3 layers grown via molecular-beam epitaxy
Bismuth ferrite layers, ∼200-nm-thick, are deposited on SrRuO 3 -coated DyScO 3 (110) o substrates in a step-flow growth regime via adsorption-controlled molecular-beam epitaxy. Structural characterization shows the films to be phase pure with substrate-limited mosaicity (0.012 ○x-ray diffraction ω-...
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Personal Name(s): | Mei, Antonio B. (Corresponding author) |
---|---|
Tang, Yongjian / Schubert, Jürgen / Jena, Debdeep / Xing, Huili / Ralph, Daniel C. / Schlom, Darrell G. | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | APL materials, 7 (2019) 7, S. 071101 - |
Imprint: |
Melville, NY
AIP Publ.
2019
|
DOI: |
10.1063/1.5103244 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.5103244 in citations.
Bismuth ferrite layers, ∼200-nm-thick, are deposited on SrRuO 3 -coated DyScO 3 (110) o substrates in a step-flow growth regime via adsorption-controlled molecular-beam epitaxy. Structural characterization shows the films to be phase pure with substrate-limited mosaicity (0.012 ○x-ray diffraction ω-rocking curve widths). The film surfaces are atomically smooth (0.2 nm root-mean-square height fluctuations) and consistof 260-nm-wide [11̄1] o -oriented terraces and unit-cell-tall (0.4 nm) step edges. The combination of electrostatic and symmetry boundaryconditions promotes two monoclinically distorted BiFeO 3 ferroelectric variants, which self-assemble into a pattern with unprecedentedlycoherent periodicity, consisting of 145 ± 2-nm-wide stripe domains separated by [001] o -oriented 71 ○ domain walls. The walls exhibit electricalrectification and enhanced conductivity. |