This title appears in the Scientific Report :
2019
Please use the identifier:
http://dx.doi.org/10.1038/s41467-019-11506-0 in citations.
Please use the identifier: http://hdl.handle.net/2128/23655 in citations.
Direct atomic insight into the role of dopants in phase-change materials
Direct atomic insight into the role of dopants in phase-change materials
Doping is indispensable to tailor phase-change materials (PCM) in optical and electronic data storage. Very few experimental studies, however, have provided quantitative information on the distribution of dopants on the atomic-scale. Here, we present atom-resolved images of Ag and In dopants in Sb2T...
Saved in:
Personal Name(s): | Zhu, Min |
---|---|
Song, Wenxiong / Konze, Philipp M. / Li, Tao / Gault, Baptiste / Chen, Xin / Shen, Jiabin / Lv, Shilong / Song, Zhitang (Corresponding author) / Wuttig, Matthias / Dronskowski, Richard | |
Contributing Institute: |
JARA - HPC; JARA-HPC JARA Institut Green IT; PGI-10 |
Published in: | Nature Communications, 10 (2019) 1, S. 3525 |
Imprint: |
[London]
Nature Publishing Group UK
2019
|
DOI: |
10.1038/s41467-019-11506-0 |
PubMed ID: |
31388013 |
Document Type: |
Journal Article |
Research Program: |
Quantum chemistry of functional chalcogenide for phase-change memories and other applications Controlling Electron Charge-Based Phenomena |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/23655 in citations.
Doping is indispensable to tailor phase-change materials (PCM) in optical and electronic data storage. Very few experimental studies, however, have provided quantitative information on the distribution of dopants on the atomic-scale. Here, we present atom-resolved images of Ag and In dopants in Sb2Te-based (AIST) PCM using electron microscopy and atom-probe tomography. Combing these with DFT calculations and chemical-bonding analysis, we unambiguously determine the dopants’ role upon recrystallization. Composition profiles corroborate the substitution of Sb by In and Ag, and the segregation of excessive Ag into grain boundaries. While In is bonded covalently to neighboring Te, Ag binds ionically. Moreover, In doping accelerates the crystallization and hence operation while Ag doping limits the random diffusion of In atoms and enhances the thermal stability of the amorphous phase. |