This title appears in the Scientific Report :
2019
Please use the identifier:
http://hdl.handle.net/2128/23671 in citations.
Please use the identifier: http://dx.doi.org/10.1002/pssr.201800578 in citations.
Disorder Control in Crystalline GeSb 2 Te 4 and its Impact on Characteristic Length Scales
Disorder Control in Crystalline GeSb 2 Te 4 and its Impact on Characteristic Length Scales
Crystalline GeSb2Te4 (GST) is a remarkable material, as it allows to continuously tune the electrical resistance by orders of magnitude without involving a structural phase transition or stoichiometric changes. While well‐ordered specimen are metallic, increasing amounts of disorder eventually lead...
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Personal Name(s): | Dück, Matthias M. |
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Schäfer, Tobias / Jakobs, Stefan / Schön, Carl‐Friedrich / Niehaus, Hannah / Cojocaru‐Mirédin, Oana / Wuttig, Matthias (Corresponding author) | |
Contributing Institute: |
JARA Institut Green IT; PGI-10 |
Published in: | Physica status solidi / Rapid research letters Rapid research letters [...], 13 (2019) 4, S. 1800578 - |
Imprint: |
Weinheim
Wiley-VCH
2019
|
DOI: |
10.1002/pssr.201800578 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
Restricted Published on 2019-01-02. Available in OpenAccess from 2020-01-02. Restricted Published on 2019-01-02. Available in OpenAccess from 2020-01-02. |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1002/pssr.201800578 in citations.
Crystalline GeSb2Te4 (GST) is a remarkable material, as it allows to continuously tune the electrical resistance by orders of magnitude without involving a structural phase transition or stoichiometric changes. While well‐ordered specimen are metallic, increasing amounts of disorder eventually lead to an insulating state with vanishing conductivity in the 0 K limit, but a similar number of charge carriers. Hence, GST provides ideal grounds to explore the impact of disorder on transport properties. Here, a sputter‐deposition process is employed that enables growing biaxially textured GST films with large grain sizes on mica substrates. The resulting films exhibit a systematic variation between metallic and truly insulating specimen upon varying deposition temperature. Transport measurements reveal that their electron mean free path can be altered by a factor of 20, while always remaining more than an order of magnitude smaller than the lateral grain size. This proves unequivocally that grain boundaries play a negligible role for electron scattering, while intra‐grain scattering, presumably by disordered vacancies, dominates. These findings underline that the insulating state and the system's evolution toward metallic conductivity are intrinsic properties of the material. |