Plasmaabscheidung von mikrokristallinem Silizium: Merkmale und Mikrostruktur und deren Deutung im Sinne von Wachstumsvorgängen
Plasmaabscheidung von mikrokristallinem Silizium: Merkmale und Mikrostruktur und deren Deutung im Sinne von Wachstumsvorgängen
The microstructure of microcrystalline silicon ($\mu$c-Si:H) grown in a low-temperature ($\lesssim$ 400 °C) PECVD process was investigated in dependence on the process parameters and the choice of the substrate material. For characterization, Raman spectroscopy, X-ray diffraction, atomic force micro...
| Personal Name(s): | Houben, Lothar (Corresponding author) |
|---|---|
| Contributing Institute: |
Publikationen vor 2000; PRE-2000; Retrocat |
| Imprint: |
Jülich
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
2000
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| Physical Description: |
138 p. |
| Document Type: |
Report Book |
| Research Program: |
Addenda |
| Series Title: |
Berichte des Forschungszentrums Jülich
3753 |
| Link: |
OpenAccess OpenAccess |
| Publikationsportal JuSER |
|
The microstructure of microcrystalline silicon ($\mu$c-Si:H) grown in a low-temperature ($\lesssim$ 400 °C) PECVD process was investigated in dependence on the process parameters and the choice of the substrate material. For characterization, Raman spectroscopy, X-ray diffraction, atomic force microscopy and transmission electron microscopy were applied. lt is shown that a stationary growth is observed in the long term structural evolution of the thin films. The characteristics of this stationary growth can be described in relation to the crystallinity of the microcrystalline samples, irrespective of the details of plasma processing and the nature of the substrate. This also applies for the initially homoepitaxial growth on Si(100), which transforms to disordered growth under similar structural changes when compared to low-temperature MBE growth. A catalytic role of hydrogen during grain epitaxy is suggested therefore and existing models for the growth of μc-Si:H are extended in order to explain for the formation of {111} facets, planar defects on {111} planes and a preferred crystallographic orientation. The present study evidences limitations for tailoring the structural properties of $\mu$c-Si:H according to technical demands. E.g. the columnar morphology and the formation of structural defects limit the extent of coherent crystalline domains. Their sizes cannot be influenced significantly by the choice of the plasma parameters and the substrate material. |