Epitaktisches Wachstum und strukturelle, elektrische und optische Charakterisierung von Ru$_{2}$Si$_{3}$-Schichten
Epitaktisches Wachstum und strukturelle, elektrische und optische Charakterisierung von Ru$_{2}$Si$_{3}$-Schichten
Recent band structure calculations predicted Ru$_{2}$Si$_{3}$ to be a direct semiconductorwith a band gap in the technologically important regime around 0.8 eV (1.5 $\mu$m).The aim of the present work was to investigate the potential of Ru$_{2}$Si$_{3}$ as a siliconbased light emitter. One prerequis...
| Personal Name(s): | Lenssen, Daniel (Corresponding author) |
|---|---|
| Contributing Institute: |
Publikationen vor 2000; PRE-2000; Retrocat |
| Imprint: |
Jülich
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
2000
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| Physical Description: |
IV, 114 p. |
| Document Type: |
Report Book |
| Research Program: |
ohne Topic |
| Series Title: |
Berichte des Forschungszentrums Jülich
3783 |
| Link: |
OpenAccess OpenAccess |
| Publikationsportal JuSER |
|
Recent band structure calculations predicted Ru$_{2}$Si$_{3}$ to be a direct semiconductorwith a band gap in the technologically important regime around 0.8 eV (1.5 $\mu$m).The aim of the present work was to investigate the potential of Ru$_{2}$Si$_{3}$ as a siliconbased light emitter. One prerequisite for investigating the optical properties is theability to grow epitaxial films. For the first time, epitaxial films were grown onSi(100) and Si(111) by a special molecular beam epitaxy method, the so-calledtemplate method. Best films showed He ion channeling minimum yield valuesbelow 5 %. The films consist of epitaxially oriented grains with dimensions up tolpm after rapid thermal annealing.Measurements of the temperature dependence of the electrical resistivity ofsilicide films on insulating substrates yielded a band gap around 0.9 eV. The opticalabsorption coefficient was measured on thin films grown on various substratesand on a single crystal by photothermal defiection spectroscopy. A direct bandgap at 0.84 eV was found. The absorption coefficient is very low up to 1.5 eV,but strongly increases at higher energies. The experimental results qualitativelyconfirmed the predictions of the band structure calculations. |