MOVPE-Wachstum und Charakterisierung von V-Graben Quantendrähten im Materialsystem AlGaAs/GaAs
MOVPE-Wachstum und Charakterisierung von V-Graben Quantendrähten im Materialsystem AlGaAs/GaAs
In this work the MOVPE-growth of v-groove quantum wires was studied. The aim was to prepare quantum wires, on which one dimensional transport can be studied. This requires high quality material as well as a large subband spacing, which is influenced by the geometry of the structures. In order to ach...
| Personal Name(s): | Kaluza, Andreas (Corresponding author) |
|---|---|
| Contributing Institute: |
Publikationen vor 2000; PRE-2000; Retrocat |
| Imprint: |
Jülich
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
2000
|
| Physical Description: |
II, 147 p. |
| Document Type: |
Report Book |
| Research Program: |
Addenda |
| Series Title: |
Berichte des Forschungszentrums Jülich
3805 |
| Link: |
OpenAccess OpenAccess |
| Publikationsportal JuSER |
|
In this work the MOVPE-growth of v-groove quantum wires was studied. The aim was to prepare quantum wires, on which one dimensional transport can be studied. This requires high quality material as well as a large subband spacing, which is influenced by the geometry of the structures. In order to achieve this, the influence of growth temperature and different metalorganic precursors on the geometry and the material quality of the GaAs quantum wells and the AlGaAs barriers was examined. First a parameter window was determined, in which high quality material can be achieved. Within this window the influence on the geometry of the quantum wires was examined. Here it was found that the growth temperature and the choice of the Gallium precursor have the biggest influence. By solving the Schrödinger equation the geometry which gives the highest subband spacing was determined. In this way parameters were found, that lead to quantum wires with the desired properties. |