Herstellung und Charakterisierung von CoSi$_{2}$/Si-Heterostrukturen und Ge/CoSi$_{2}$/Si-Heterostrukturen
Herstellung und Charakterisierung von CoSi$_{2}$/Si-Heterostrukturen und Ge/CoSi$_{2}$/Si-Heterostrukturen
Metal silicides are widely used in microelectronics as contact materials and interconnects.Compared to their polycrystalline counterparts, monocrystalline silicides showa higher thermal stability and nearly perfect interfaces and surfaces. Moreover, epitaxial silicide-semiconductor heterostructures...
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Personal Name(s): | Kappius, Ludger (Corresponding author) |
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Contributing Institute: |
Publikationen vor 2000; PRE-2000; Retrocat |
Imprint: |
Jülich
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
2000
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Physical Description: |
III, 146 p. |
Document Type: |
Report Book |
Research Program: |
Addenda |
Series Title: |
Berichte des Forschungszentrums Jülich
3811 |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Metal silicides are widely used in microelectronics as contact materials and interconnects.Compared to their polycrystalline counterparts, monocrystalline silicides showa higher thermal stability and nearly perfect interfaces and surfaces. Moreover, epitaxial silicide-semiconductor heterostructures provide new ways for the fabrication of novel,vertical devices.In this thesis epitaxial CoSi$_{2}$/Si-heterostructures and Ge/CoSi$_{2}$/Si-heterostructureswere grown and characterised. The growth of 20 nm thick CoSi$_{2}$ layers on (100) Si bymolecular beam allotaxy was studied. Process parameters were optimised with respect tothe thermal stability of the silicide layers. This was an essential requirement for successfuland reproducible patterning of silicide layers by a novel process using local oxidation ofthe silicide. The diffusion o£ B and Sb in Si under the influence of an oxidised CoSi$_{2}$layer was studied, using SIMS investigations of doping superlattices. For the first time,surfactant mediated epitaxy of Ge on top of in situ annealed COSi$_{2}$(111) surface layers wassuccesfully used to fabricate epitaxial Ge/CoSi$_{2}$/Si-heterostructures. These layer systemsmay be used in Si-based optoelectronic devices. |