Elektroneninterferenzeffekte in modulationsdotierten Al$_{0.3}$Ga$_{0.7}$As/GaAs-Heterostrukturen
Elektroneninterferenzeffekte in modulationsdotierten Al$_{0.3}$Ga$_{0.7}$As/GaAs-Heterostrukturen
Electron interference effects in two-dimensional electron gases at the interfaceof modulation doped Al$_{0.3}$Ga$_{0.7}$As/GaAs-heterostructures have been studied.The electron phase of a part of a collimated ballistic electron beam could becontrolled by a Schottky gate. The shift of the interference...
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Personal Name(s): | Krafft, Birgit (Corresponding author) |
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Contributing Institute: |
Publikationen vor 2000; PRE-2000; Retrocat |
Imprint: |
Jülich
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
2000
|
Physical Description: |
105 p. |
Document Type: |
Report Book |
Research Program: |
ohne Topic |
Series Title: |
Berichte des Forschungszentrums Jülich
3817 |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Electron interference effects in two-dimensional electron gases at the interfaceof modulation doped Al$_{0.3}$Ga$_{0.7}$As/GaAs-heterostructures have been studied.The electron phase of a part of a collimated ballistic electron beam could becontrolled by a Schottky gate. The shift of the interference pattern due to anexternal magnetic field can be explained by the Aharonov-Bohm effect.Electron interference effects have been studied in wet chemically etched ringstructures with respect of temperature and ring dimensions. Periodic Aharonov-Bohm oscillations are superimposed on a non-periodic interference pattern dueto universal conductance fluctuations in the quasi-ballistic regime.A new self-aligned gate-process has been developed to prepare Schottky gatesparallel to the ring whereas in-plane gates were etched simultaneously with thering structure. The resistance of the ring-structures shows a stepwise andwavelike increase with decreasing gate-voltage applied to the side-gates. In acertain voltage range additional interference maxima/minima appear and leadto frequency doubling and a phase shift. |