Elektroneninterferenzeffekte in modulationsdotierten Al$_{0.3}$Ga$_{0.7}$As/GaAs-Heterostrukturen
Elektroneninterferenzeffekte in modulationsdotierten Al$_{0.3}$Ga$_{0.7}$As/GaAs-Heterostrukturen
Electron interference effects in two-dimensional electron gases at the interfaceof modulation doped Al$_{0.3}$Ga$_{0.7}$As/GaAs-heterostructures have been studied.The electron phase of a part of a collimated ballistic electron beam could becontrolled by a Schottky gate. The shift of the interference...
| Personal Name(s): | Krafft, Birgit (Corresponding author) |
|---|---|
| Contributing Institute: |
Publikationen vor 2000; PRE-2000; Retrocat |
| Imprint: |
Jülich
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
2000
|
| Physical Description: |
105 p. |
| Document Type: |
Report Book |
| Research Program: |
ohne Topic |
| Series Title: |
Berichte des Forschungszentrums Jülich
3817 |
| Link: |
OpenAccess OpenAccess |
| Publikationsportal JuSER |
|
Electron interference effects in two-dimensional electron gases at the interfaceof modulation doped Al$_{0.3}$Ga$_{0.7}$As/GaAs-heterostructures have been studied.The electron phase of a part of a collimated ballistic electron beam could becontrolled by a Schottky gate. The shift of the interference pattern due to anexternal magnetic field can be explained by the Aharonov-Bohm effect.Electron interference effects have been studied in wet chemically etched ringstructures with respect of temperature and ring dimensions. Periodic Aharonov-Bohm oscillations are superimposed on a non-periodic interference pattern dueto universal conductance fluctuations in the quasi-ballistic regime.A new self-aligned gate-process has been developed to prepare Schottky gatesparallel to the ring whereas in-plane gates were etched simultaneously with thering structure. The resistance of the ring-structures shows a stepwise andwavelike increase with decreasing gate-voltage applied to the side-gates. In acertain voltage range additional interference maxima/minima appear and leadto frequency doubling and a phase shift. |