This title appears in the Scientific Report :
2019
Please use the identifier:
http://hdl.handle.net/2128/24328 in citations.
Please use the identifier: http://dx.doi.org/10.1016/j.apsusc.2019.03.312 in citations.
Towards Oxide Electronics: a Roadmap
Towards Oxide Electronics: a Roadmap
At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore’s law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century s...
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Please use the identifier: http://dx.doi.org/10.1016/j.apsusc.2019.03.312 in citations.
At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore’s law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon-based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community. |