This title appears in the Scientific Report :
2020
Please use the identifier:
http://dx.doi.org/10.1103/PhysRevMaterials.4.033604 in citations.
Please use the identifier: http://hdl.handle.net/2128/24610 in citations.
Thermally activated diffusion and lattice relaxation in (Si)GeSn materials
Thermally activated diffusion and lattice relaxation in (Si)GeSn materials
Germanium-tin (GeSn) alloys have emerged as a promising material for future optoelectronics, energy harvesting, and nanoelectronics owing to their direct band gap and compatibility with existing Si-based electronics. Yet, their metastability poses significant challenges calling for in-depth investig...
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Personal Name(s): | von den Driesch, Nils (Corresponding author) |
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Wirths, Stephan / Troitsch, Rene / Mussler, Gregor / Breuer, Uwe / Moutanabbir, Oussama / Grützmacher, Detlev / Buca, Dan | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology; JARA-FIT JARA Institut Green IT; PGI-10 Analytik; ZEA-3 |
Published in: | Physical review materials, 4 (2020) 3, S. 033604 |
Imprint: |
College Park, MD
APS
2020
|
DOI: |
10.1103/PhysRevMaterials.4.033604 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/24610 in citations.
Germanium-tin (GeSn) alloys have emerged as a promising material for future optoelectronics, energy harvesting, and nanoelectronics owing to their direct band gap and compatibility with existing Si-based electronics. Yet, their metastability poses significant challenges calling for in-depth investigations of their thermal behavior. With this perspective, this work addresses the interdiffusion processes throughout thermal annealing of pseudomorphic GeSn binary and SiGeSn ternary alloys. In both systems, the initially pseudomorphic layers are relaxed upon annealing exclusively via thermally induced diffusional mass transfer of Sn. Systematic postgrowth annealing experiments reveal enhanced Sn and Si diffusion regimes that manifest at temperatures below 650 °C. The amplified low-temperature diffusion and the observation of only subtle differences between binary and ternary hint at the unique metastability of the Si-Ge-Sn material system as the most important driving force for phase separation. |