This title appears in the Scientific Report :
2020
Please use the identifier:
http://hdl.handle.net/2128/25199 in citations.
Please use the identifier: http://dx.doi.org/10.1002/adem.201901437 in citations.
Impact of Laser Treatment on Hydrogenated Amorphous Silicon Properties
Impact of Laser Treatment on Hydrogenated Amorphous Silicon Properties
Herein, the application of laser radiation to locally modify the hydrogen distribution within hydrogenated amorphous silicon films on a short time scale is studied. The impact of laser power and irradiation time on the temperature of the silicon layer during the laser treatment and the hydrogen outd...
Saved in:
Personal Name(s): | Maurer, Claudia |
---|---|
Beyer, Wolfhard / Hülsbeck, Markus / Breuer, Uwe / Rau, Uwe / Haas, Stefan (Corresponding author) | |
Contributing Institute: |
Photovoltaik; IEK-5 Analytik; ZEA-3 |
Published in: | Advanced engineering materials, 22 (2020) 6, S. 1901437 |
Imprint: |
Frankfurt, M.
Deutsche Gesellschaft für Materialkunde
2020
|
DOI: |
10.1002/adem.201901437 |
Document Type: |
Journal Article |
Research Program: |
Solar cells of the next generation |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1002/adem.201901437 in citations.
Herein, the application of laser radiation to locally modify the hydrogen distribution within hydrogenated amorphous silicon films on a short time scale is studied. The impact of laser power and irradiation time on the temperature of the silicon layer during the laser treatment and the hydrogen outdiffusion is analyzed. Moreover, the resulting optoelectronic properties of the amorphous silicon are examined. On a timescale of a few seconds or less, the hydrogen concentration in the near‐surface region of the silicon layer can be successfully decreased without major impact on the optoelectronic properties. |