This title appears in the Scientific Report :
2020
Please use the identifier:
http://dx.doi.org/10.1103/PhysRevApplied.13.034068 in citations.
Please use the identifier: http://hdl.handle.net/2128/24620 in citations.
Large, Tunable Valley Splitting and Single-Spin Relaxation Mechanisms in a Si / Si x Ge 1 − x Quantum Dot
Large, Tunable Valley Splitting and Single-Spin Relaxation Mechanisms in a Si / Si x Ge 1 − x Quantum Dot
Valley splitting is a key feature of silicon-based spin qubits. Quantum dots in Si/SixGe1−x heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splittin...
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Personal Name(s): | Hollmann, Arne |
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Struck, Tom / Langrock, Veit / Schmidbauer, Andreas / Schauer, Floyd / Leonhardt, Tim / Sawano, Kentarou / Riemann, Helge / Abrosimov, Nikolay V. / Bougeard, Dominique / Schreiber, Lars (Corresponding author) | |
Contributing Institute: |
JARA Institut Quanteninformation; PGI-11 Theoretische Nanoelektronik; PGI-2 |
Published in: | Physical review applied, 13 (2020) 3, S. 034068 |
Imprint: |
College Park, Md. [u.a.]
American Physical Society
2020
|
DOI: |
10.1103/PhysRevApplied.13.034068 |
Document Type: |
Journal Article |
Research Program: |
Controlling Collective States |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/24620 in citations.
Valley splitting is a key feature of silicon-based spin qubits. Quantum dots in Si/SixGe1−x heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 μeV in a gate-defined single quantum dot, hosted in molecular-beam-epitaxy-grown 68Si/SixGe1−x. The valley splitting is monotonically and reproducibly tunable up to 15% by gate voltages, originating from a 6-nm lateral displacement of the quantum dot. We observe static spin relaxation times T1>1 s at low magnetic fields in our device containing an integrated nanomagnet. At higher magnetic fields, T1 is limited by the valley hotspot and by phonon noise coupling to intrinsic and artificial spin-orbit coupling, including phonon bottlenecking. |