This title appears in the Scientific Report :
2020
Please use the identifier:
http://dx.doi.org/10.1063/1.5102075 in citations.
Please use the identifier: http://hdl.handle.net/2128/25437 in citations.
Progressive amorphization of GeSbTe phase-change material under electron beam irradiation
Progressive amorphization of GeSbTe phase-change material under electron beam irradiation
Fast and reversible phase transitions in chalcogenide phase-change materials (PCMs), in particular, Ge-Sb-Te compounds, are not only of fundamental interests but also make PCMs based random access memory a leading candidate for nonvolatile memory and neuromorphic computing devices. To RESET the memo...
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Personal Name(s): | Jiang, Ting-Ting |
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Wang, Jiang-Jing (Corresponding author) / Lu, Lu / Ma, Chuan-Sheng / Zhang, Dan-Li / Rao, Feng / Jia, Chun-Lin / Zhang, Wei | |
Contributing Institute: |
Physik Nanoskaliger Systeme; ER-C-1 |
Published in: | APL materials, 7 (2019) 8, S. 081121 - |
Imprint: |
Melville, NY
AIP Publ.
2019
|
DOI: |
10.1063/1.5102075 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen der Ionentransportprozesse in resistiv schaltenden Oxiden (B03) Controlling Configuration-Based Phenomena |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/25437 in citations.
Fast and reversible phase transitions in chalcogenide phase-change materials (PCMs), in particular, Ge-Sb-Te compounds, are not only of fundamental interests but also make PCMs based random access memory a leading candidate for nonvolatile memory and neuromorphic computing devices. To RESET the memory cell, crystalline Ge-Sb-Te has to undergo phase transitions first to a liquid state and then to an amorphous state, corresponding to an abrupt change in electrical resistance. In this work, we demonstrate a progressive amorphization process in GeSb2Te4 thin films under electron beam irradiation on a transmission electron microscope (TEM). Melting is shown to be completely absent by the in situ TEM experiments. The progressive amorphization process resembles closely the cumulative crystallization process that accompanies a continuous change in electrical resistance. Our work suggests that if displacement forces can be implemented properly, it should be possible to emulate symmetric neuronal dynamics by using PCMs. |