This title appears in the Scientific Report :
2020
Please use the identifier:
http://dx.doi.org/10.1364/OE.398805 in citations.
Please use the identifier: http://hdl.handle.net/2128/25596 in citations.
Computational proximity lithography with extreme ultraviolet radiation
Computational proximity lithography with extreme ultraviolet radiation
The potential of extreme ultraviolet (EUV) computational proximity lithography for fabrication of arbitrary nanoscale patterns is investigated. We propose to use a holographic mask (attenuating phase shifting mask) consisting of structures of two phase levels. This approach allows printing of arbitr...
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Personal Name(s): | Deuter, Valerie (Corresponding author) |
---|---|
Grochowicz, Maciej / Brose, Sascha / Biller, Jan / Danylyuk, Serhiy / Taubner, Thomas / Siemion, Agnieszka / Grützmacher, Detlev / Juschkin, Larissa | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 JARA Institut Green IT; PGI-10 |
Published in: | Optics express, 28 (2020) 18, S. 27000 - |
Imprint: |
Washington, DC
Soc.
2020
|
DOI: |
10.1364/OE.398805 |
PubMed ID: |
32906962 |
Document Type: |
Journal Article |
Research Program: |
Controlling Configuration-Based Phenomena |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/25596 in citations.
The potential of extreme ultraviolet (EUV) computational proximity lithography for fabrication of arbitrary nanoscale patterns is investigated. We propose to use a holographic mask (attenuating phase shifting mask) consisting of structures of two phase levels. This approach allows printing of arbitrary, non-periodic structures without using high-resolution imaging optics. The holographic mask is designed for a wavelength of 13.5 nm with a conventional high-resolution electron beam resist as the phase shifting medium (pixel size 50 nm). The imaging performance is evaluated by using EUV radiation with different degrees of spatial coherence. Therefore exposures on identical masks are carried out with both undulator radiation at a synchrotron facility and plasma-based radiation at a laboratory setup. |