This title appears in the Scientific Report :
2014
Please use the identifier:
http://dx.doi.org/10.1149/06411.0085ecst in citations.
(Keynote) Epitaxy-Based Strain-Engineering Methods for Advanced Devices
(Keynote) Epitaxy-Based Strain-Engineering Methods for Advanced Devices
Saved in:
Personal Name(s): | Grutzmacher, D. (Corresponding Author) |
---|---|
Wirths, S. / Rieger, T. / Buca, D. / Stoica, T. / Lepsa, M. I. / Zhao, Q.-T. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 |
Published in: |
High Purity and High Mobility Semiconductors 13 |
Imprint: |
Pennington, NJ
Electrochemical Society (ECS)
2014
|
Physical Description: |
85 - 96 |
DOI: |
10.1149/06411.0085ecst |
Conference: | ECS The 226th Meeting of the Electrochemical Society, Cancun (Mexico), 2014-10-05 - 2014-10-09 |
Document Type: |
Contribution to a conference proceedings Contribution to a book |
Research Program: |
Frontiers of charge based Electronics |
Series Title: |
ECS transactions
64 |
Publikationsportal JuSER |
Description not available. |