This title appears in the Scientific Report :
2020
Please use the identifier:
http://hdl.handle.net/2128/26400 in citations.
Please use the identifier: http://dx.doi.org/10.1021/acsanm.0c02241 in citations.
Phase-Pure Wurtzite GaAs Nanowires Grown by Self-Catalyzed Selective Area Molecular Beam Epitaxy for Advanced Laser Devices and Quantum Disks
Phase-Pure Wurtzite GaAs Nanowires Grown by Self-Catalyzed Selective Area Molecular Beam Epitaxy for Advanced Laser Devices and Quantum Disks
The control of the crystal phase in self-catalyzed nanowires (NWs) is one of the central remaining open challenges in the research field of III/V semiconductor NWs. While several groups analyzed and revealed the growth dynamics, no experimental growth scheme has been verified yet, which reproducibly...
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Personal Name(s): | Jansen, Marvin Marco (Corresponding author) |
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Perla, Pujitha / Kaladzhian, Mane / von den Driesch, Nils / Janssen, Johanna / Luysberg, Martina / Lepsa, Mihail I. / Grützmacher, Detlev / Pawlis, Alexander (Corresponding author) | |
Contributing Institute: |
JARA Institut Green IT; PGI-10 Physik Nanoskaliger Systeme; ER-C-1 Halbleiter-Nanoelektronik; PGI-9 |
Published in: | ACS applied nano materials, 3 (2020) 11, S. 11037 - 11047 |
Imprint: |
Washington, DC
ACS Publications
2020
|
DOI: |
10.1021/acsanm.0c02241 |
Document Type: |
Journal Article |
Research Program: |
Entwicklung von Spin-Qubit Bauelementen aus ZnSe/(Zn,Mg)Se Quantenstrukturen EXC 2004: Materie und Licht für Quanteninformation (ML4Q) Controlling Configuration-Based Phenomena Controlling Collective States |
Link: |
Get full text Published on 2020-10-19. Available in OpenAccess from 2021-10-19. |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1021/acsanm.0c02241 in citations.
The control of the crystal phase in self-catalyzed nanowires (NWs) is one of the central remaining open challenges in the research field of III/V semiconductor NWs. While several groups analyzed and revealed the growth dynamics, no experimental growth scheme has been verified yet, which reproducibly ensures the phase purity of binary self-catalyzed grown NWs. Here, we demonstrate the advanced control of self-catalyzed molecular beam epitaxy of GaAs NWs with up to a grade of 100% wurtzite (WZ) phase purity. The evolution of the most important properties during the growth, namely, the contact angle of the Ga droplet, the NW length, and the diameter is analyzed by scanning electron microscopy and transmission electron microscopy. Based on these results, we developed a comprehensive NW growth model for calculating the time-dependent evolution of the Ga droplet contact angle. Using this model, the Ga flux was dynamically modified during the growth to control and stabilize the contact angle in a certain range favoring the growth of phase-pure GaAs NWs. Although focusing on the self-catalyzed growth of WZ GaAs NWs, our model is also applicable to achieve phase-pure zinc blende (ZB) NWs and can be easily generalized to other III/V compounds. The self-catalyzed growth of such NWs may pave the way for substantial improvement of GaAs NW laser devices, the controlled growth of WZ/ZB quantum disks, and novel heterostructured core/multishell NW systems with a pristine crystalline order. |