This title appears in the Scientific Report :
2021
Please use the identifier:
http://dx.doi.org/10.1103/PhysRevLett.124.217701 in citations.
Please use the identifier: http://hdl.handle.net/2128/28079 in citations.
Electric-Field Control of Spin-Orbit Torques in Perpendicularly Magnetized W / CoFeB / MgO Films
Electric-Field Control of Spin-Orbit Torques in Perpendicularly Magnetized W / CoFeB / MgO Films
Controlling magnetism by electric fields offers a highly attractive perspective for designing future generations of energy-efficient information technologies. Here, we demonstrate that the magnitude of current-induced spin-orbit torques in thin perpendicularly magnetized CoFeB films can be tuned and...
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Personal Name(s): | Filianina, Mariia |
---|---|
Hanke, Jan-Philipp / Lee, Kyujoon / Han, Dong-Soo / Jaiswal, Samridh / Rajan, Adithya / Jakob, Gerhard / Mokrousov, Yuriy / Kläui, Mathias (Corresponding author) | |
Contributing Institute: |
Quanten-Theorie der Materialien; PGI-1 JARA - HPC; JARA-HPC JARA-FIT; JARA-FIT Quanten-Theorie der Materialien; IAS-1 |
Published in: | Physical review letters, 124 (2020) 21, S. 217701 |
Imprint: |
College Park, Md.
APS
2020
|
DOI: |
10.1103/PhysRevLett.124.217701 |
Document Type: |
Journal Article |
Research Program: |
Topological Matter |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/28079 in citations.
Controlling magnetism by electric fields offers a highly attractive perspective for designing future generations of energy-efficient information technologies. Here, we demonstrate that the magnitude of current-induced spin-orbit torques in thin perpendicularly magnetized CoFeB films can be tuned and even increased by electric-field generated piezoelectric strain. Using theoretical calculations, we uncover that the subtle interplay of spin-orbit coupling, crystal symmetry, and orbital polarization is at the core of the observed strain dependence of spin-orbit torques. Our results open a path to integrating two energy efficient spin manipulation approaches, the electric-field-induced strain and the current-induced magnetization switching, thereby enabling novel device concepts. |