This title appears in the Scientific Report :
2010
Please use the identifier:
http://dx.doi.org/10.1063/1.3284089 in citations.
Please use the identifier: http://hdl.handle.net/2128/17227 in citations.
Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation
Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation
We present a systematic analysis of arsenic dopant segregation during nickel silicide formation. The slopes and concentrations of the arsenic dopant profiles at the NiSi/Si interface have been studied as a function of implantation energy, implantation dose, and NiSi thickness. Silicidation induced d...
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Personal Name(s): | Feste, S. F. |
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Knoch, J. / Buca, D. / Zhao, Q. T. / Breuer, U. / Mantl, S. | |
Contributing Institute: |
Zentralabteilung für Chemische Analysen; ZCH JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; IBN-1 |
Published in: | Journal of applied physics, 107 (2010) S. 044510-6 |
Imprint: |
Melville, NY
American Institute of Physics
2010
|
Physical Description: |
044510-6 |
DOI: |
10.1063/1.3284089 |
Document Type: |
Journal Article |
Research Program: |
Silicon-based nanostructures and nanodevices for long term nanoelectronics applications Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Applied Physics
107 |
Subject (ZB): | |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/17227 in citations.
We present a systematic analysis of arsenic dopant segregation during nickel silicide formation. The slopes and concentrations of the arsenic dopant profiles at the NiSi/Si interface have been studied as a function of implantation energy, implantation dose, and NiSi thickness. Silicidation induced dopant segregation conserves the dopant slope at the silicide/silicon interface up to NiSi thicknesses of three times the as-implanted peak depth before degrading. Best slopes and highest dopant concentrations are obtained for low implantation energies and thin NiSi layers. We also demonstrate that the steepness of the dopant profile at the NiSi/Si interface can be significantly improved through a two-step annealing process for NiSi formation. For As, 1 keV, 1x10(15) cm(-2), and a 17 nm NiSi layer, a NiSi/Si junction with a dopant slope of 3.2 nm/decade has been obtained. An effective Schottky barrier of Phi(SB)=0.12 eV was determined by low temperature measurements of Schottky diodes with 20 nm NiSi formed by an optimized annealing process. |