This title appears in the Scientific Report :
2020
Stable redox-based resistive switching non-volatile memories (ReRAM) from ultrathin metal oxide layers for next generation neuromorphic computation
Stable redox-based resistive switching non-volatile memories (ReRAM) from ultrathin metal oxide layers for next generation neuromorphic computation
Saved in:
Personal Name(s): | Aussen, Stephan (Corresponding author) |
---|---|
Hardtdegen, Alexander / Meledin, Alexander / Dippel, A. / Gutowski, O. / Zimmermann, V. / Roelsgaard, M. / Dittmann, Regina / Hoffmann-Eifert, Susanne | |
Contributing Institute: |
Elektronische Materialien; PGI-7 Neue Materialien und Chemie; PTJ-NMT Materialwissenschaft u. Werkstofftechnik; ER-C-2 JARA Institut Green IT; PGI-10 JARA-FIT; JARA-FIT |
Imprint: |
2020
|
Conference: | CMPC Workshop 2020: surface and interface differaction and scattering (Germany), 2020-02-03 - 2020-02-04 |
Document Type: |
Talk (non-conference) |
Research Program: |
Controlling Collective States |
Publikationsportal JuSER |
Description not available. |