This title appears in the Scientific Report :
2020
Please use the identifier:
http://dx.doi.org/10.1038/s41598-020-79348-1 in citations.
Please use the identifier: http://hdl.handle.net/2128/27029 in citations.
Ultrathin polymeric films for interfacial passivation in wide band-gap perovskite solar cells
Ultrathin polymeric films for interfacial passivation in wide band-gap perovskite solar cells
Wide band-gap perovskite solar cells have the potential for a relatively high output voltage and resilience in a degradation-inducing environment. Investigating the reasons why high voltages with adequate output power have not been realized yet is an underexplored part in perovskite research althoug...
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Personal Name(s): | Ferdowsi, Parnian |
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Ochoa-Martinez, Efrain / Alonso, Sandy Sanchez / Steiner, Ullrich / Saliba, Michael (Corresponding author) | |
Contributing Institute: |
Photovoltaik; IEK-5 |
Published in: | Scientific reports, 10 (2020) 1, S. 22260 |
Imprint: |
[London]
Macmillan Publishers Limited, part of Springer Nature
2020
|
DOI: |
10.1038/s41598-020-79348-1 |
Document Type: |
Journal Article |
Research Program: |
Helmholtz Young Investigators Group (Helmholtz Young Investigators Group: Key Technologies) Solar cells of the next generation |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/27029 in citations.
Wide band-gap perovskite solar cells have the potential for a relatively high output voltage and resilience in a degradation-inducing environment. Investigating the reasons why high voltages with adequate output power have not been realized yet is an underexplored part in perovskite research although it is of paramount interest for multijunction solar cells. One reason is interfacial carrier recombination that leads to reduced carrier lifetimes and voltage loss. To further improve the Voc of methylammonium lead tri-bromide (MAPbBr3), that has a band-gap of 2.3 eV, interface passivation technique is an important strategy. Here we demonstrate two ultrathin passivation layers consisting of PCBM and PMMA, that can effectively passivate defects at the TiO2/perovskite and perovskite/spiro-OMeTAD interfaces, respectively. In addition, perovskite crystallization was investigated with the established anti-solvent method and the novel flash infrared annealing (FIRA) with and without passivation layers. These modifications significantly suppress interfacial recombination providing a pathway for improved VOC’s from 1.27 to 1.41 V using anti solvent and from 1.12 to 1.36 V using FIRA. Furthermore, we obtained more stable devices through passivation after 140 h where the device retained 70% of the initial performance value. |