This title appears in the Scientific Report :
2021
Please use the identifier:
http://dx.doi.org/10.1002/aenm.202003386 in citations.
Please use the identifier: http://hdl.handle.net/2128/27753 in citations.
Interface Optimization via Fullerene Blends Enables Open-Circuit Voltages of 1.35 V in CH3NH3Pb(I0.8Br0.2)3 Solar Cells
Interface Optimization via Fullerene Blends Enables Open-Circuit Voltages of 1.35 V in CH3NH3Pb(I0.8Br0.2)3 Solar Cells
Nonradiative recombination processes are the biggest hindrance to approaching the radiative limit of the open‐circuit voltage for wide bandgap perovskite solar cells. In addition to high bulk quality, good interfaces and good energy level alignment for majority carriers at charge transport layer‐abs...
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Personal Name(s): | Liu, Zhifa |
---|---|
Siekmann, Johanna (Corresponding author) / Klingebiel, Benjamin / Rau, Uwe / Kirchartz, Thomas (Corresponding author) | |
Contributing Institute: |
Photovoltaik; IEK-5 |
Published in: | Advanced energy materials, 11 (2021) 16, S. 2003386 |
Imprint: |
Weinheim
Wiley-VCH
2021
|
DOI: |
10.1002/aenm.202003386 |
Document Type: |
Journal Article |
Research Program: |
Photovoltaik und Windenergie |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/27753 in citations.
Nonradiative recombination processes are the biggest hindrance to approaching the radiative limit of the open‐circuit voltage for wide bandgap perovskite solar cells. In addition to high bulk quality, good interfaces and good energy level alignment for majority carriers at charge transport layer‐absorber interfaces are crucial to minimize nonradiative recombination pathways. By tuning the lowest‐unoccupied molecular‐orbital of electron transport layers via the use of different fullerenes and fullerene blends, open‐circuit voltages exceeding 1.35 V in CH3NH3Pb(I0.8Br0.2)3 device are demonstrated. Further optimization of mobility in binary fullerenes electron transport layers can boost the power conversion efficiency as high as 18.9%. It is noted in particular that the Voc fill factor product is >1.096 V, which is the highest value reported for halide perovskites with this bandgap. |