This title appears in the Scientific Report :
2021
Please use the identifier:
http://dx.doi.org/10.1109/IRMMW-THz46771.2020.9370390 in citations.
Photomixing THz Generation from Nitrogen-Ion–Implanted GaAs Metal-Semiconductor-Metal Diodes Enhanced by a Bragg Mirror
Photomixing THz Generation from Nitrogen-Ion–Implanted GaAs Metal-Semiconductor-Metal Diodes Enhanced by a Bragg Mirror
We demonstrate that a nitrogen-implanted GaAs can be successfully implemented as a tunable, THz frequency range photomixer, optimized for the best performance for optical excitation in the 760-800 nm range. The latter was obtained by fabricating a metal-semiconductor-metal diode on top of a Bragg mi...
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Personal Name(s): | Chen, Genyu (Corresponding author) |
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Mikulics, Martin / Adam, Roman / Pericolo, Anthony / Serafini, John / Preble, Stefan / Cheng, J. / Chimera, C. / Komissarov, I. / Hardtdegen, Hilde H. / Sobolewski, Roman | |
Contributing Institute: |
Elektronische Eigenschaften; PGI-6 Materialwissenschaft u. Werkstofftechnik; ER-C-2 |
Published in: |
[Proceedings] - IEEE, 2020. - ISBN 978-1-7281-6620-9 - doi:10.1109/IRMMW-THz46771.2020.9370390 |
Imprint: |
Tokyo
Springer814959
2020
|
Physical Description: |
1-2 |
DOI: |
10.1109/IRMMW-THz46771.2020.9370390 |
Conference: | 2020 45th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Buffalo (NY), 2020-11-08 - 2020-11-13 |
Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Controlling Configuration-Based Phenomena |
Publikationsportal JuSER |
We demonstrate that a nitrogen-implanted GaAs can be successfully implemented as a tunable, THz frequency range photomixer, optimized for the best performance for optical excitation in the 760-800 nm range. The latter was obtained by fabricating a metal-semiconductor-metal diode on top of a Bragg mirror structure and resulted in a clear enhancement of the THz radiation emission in photomixing experiments. |