This title appears in the Scientific Report :
2021
Please use the identifier:
http://dx.doi.org/10.1109/IRMMW-THz46771.2020.9370531 in citations.
Magnetic-Field Enhancement of THz Surface Emission in Highly Resistive GaAs
Magnetic-Field Enhancement of THz Surface Emission in Highly Resistive GaAs
Irradiation of semiconductor surfaces with femtosecond optical laser pulses is one of the common techniques for broadband, free-space THz transient generation. We demonstrate that the amplitude of surface-emitted THz pulses scales linearly with an applied, external, in-plane magnetic field. We studi...
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Personal Name(s): | Chen, Genyu (Corresponding author) |
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Chakraborty, Debamitra / Cheng, Jing / Chimera, Charles / Komissarov, Ivan / Mikulics, Martin / Adam, Roman / Burgler, Daniel E. / Schneider, Claus M. / Hardtdegen, Hilde / Sobolewski, Roman | |
Contributing Institute: |
Elektronische Materialien; IFF-6 Materialwissenschaft u. Werkstofftechnik; ER-C-2 |
Imprint: |
Tokyo
Springer814959
2020
|
Physical Description: |
1-2 |
DOI: |
10.1109/IRMMW-THz46771.2020.9370531 |
Conference: | 2020 45th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Buffalo (NY), 2020-11-08 - 2020-11-13 |
Document Type: |
Contribution to a conference proceedings |
Research Program: |
Controlling Configuration-Based Phenomena |
Publikationsportal JuSER |
Irradiation of semiconductor surfaces with femtosecond optical laser pulses is one of the common techniques for broadband, free-space THz transient generation. We demonstrate that the amplitude of surface-emitted THz pulses scales linearly with an applied, external, in-plane magnetic field. We studied the effect in several highly resistive GaAs samples and ascribe it to the Lorentz force that additionally accelerates optically excited carriers. |