This title appears in the Scientific Report :
2021
Please use the identifier:
http://dx.doi.org/10.1063/5.0015157 in citations.
Please use the identifier: http://hdl.handle.net/2128/27616 in citations.
Alloy segregation at stacking faults in zincblende GaN heterostructures
Alloy segregation at stacking faults in zincblende GaN heterostructures
Current cubic zincblende III-Nitride epilayers grown on 3C-SiC/Si(001) substrates by metal-organic vapor-phase epitaxy contain a high density of stacking faults lying on the {111} planes. A combination of high-resolution scanning transmission electron microscopy and energy dispersive x-ray spectrome...
Saved in:
Personal Name(s): | Ding, B. (Corresponding author) |
---|---|
Frentrup, M. / Fairclough, S. M. / Kappers, M. J. / Jain, M. / Kovács, A. / Wallis, D. J. / Oliver, R. A. | |
Contributing Institute: |
Physik Nanoskaliger Systeme; ER-C-1 |
Published in: | Journal of applied physics, 128 (2020) 14, S. 145703 - |
Imprint: |
Melville, NY
American Inst. of Physics
2020
|
DOI: |
10.1063/5.0015157 |
Document Type: |
Journal Article |
Research Program: |
Controlling Configuration-Based Phenomena |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/27616 in citations.
Current cubic zincblende III-Nitride epilayers grown on 3C-SiC/Si(001) substrates by metal-organic vapor-phase epitaxy contain a high density of stacking faults lying on the {111} planes. A combination of high-resolution scanning transmission electron microscopy and energy dispersive x-ray spectrometry is used to investigate the effects of alloy segregation around stacking faults in a zincblende III-nitride light-emitting structure, incorporating InGaN quantum wells and an AlGaN electron blocking layer. It is found that in the vicinity of the stacking faults, the indium and aluminum contents were a factor of 2.3 ± 1.3 and 1.9 ± 0.5 higher, respectively, than that in the surrounding material. Indium and aluminum are also observed to segregate differently in relation to stacking faults with indium segregating adjacent to the stacking fault while aluminum segregates directly on the stacking fault |