This title appears in the Scientific Report :
2021
Please use the identifier:
http://hdl.handle.net/2128/28402 in citations.
Transparent Passivating Contact for Crystalline Silicon Solar Cells
Transparent Passivating Contact for Crystalline Silicon Solar Cells
The goal of this work is to develop a transparent, passivating and conductivecontact for the light facing side of crystalline silicon solar cells. State of the artpassivating contacts show a very high passivation quality of the silicon surface aswell as a high electrical conductivity. However, due t...
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Personal Name(s): | Köhler, Malte (Corresponding author) |
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Contributing Institute: |
Photovoltaik; IEK-5 |
Imprint: |
Jülich
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
2021
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Physical Description: |
186 |
Dissertation Note: |
Dissertation, RWTH Aachen University, 2020 |
ISBN: |
978-3-95806-550-5 |
Document Type: |
Book Dissertation / PhD Thesis |
Research Program: |
ohne Topic |
Series Title: |
Schriften des Forschungszentrums Jülich Reihe Energie & Umwelt / Energy & Environment
538 |
Link: |
OpenAccess |
Publikationsportal JuSER |
The goal of this work is to develop a transparent, passivating and conductivecontact for the light facing side of crystalline silicon solar cells. State of the artpassivating contacts show a very high passivation quality of the silicon surface aswell as a high electrical conductivity. However, due to their restricted transparencyand comparably high parasitic absorption for the incoming sunlight these contactsare not ideal for the use on the sun facing side of the solar cells. With the aim ofincreasing the efficiency of crystalline silicon solar cells, the need for a transparentpassivating contact arises.One material, which is suitable as a transparent passivating contact due to itshigh transparency and electrical conductivity, is n-type doped microcrystalline siliconcarbide (mc-SiC:H(n)). It was shown in literature, that depositing mc-SiC:H(n)using hot-wire chemical vapor deposition (HWCVD) directly on the crystalline siliconsurface leads to a deterioration of the passivation. Additionally it was shown,that using a thin silicon oxide (SiO2) in between the crystalline silicon and themc-SiC:H(n) can prevent this deterioration of the passivation while showing a hightransparency and high electrical conductivity. However, transferring these propertiesof the contact layer stack into a first working solar cell proved to be difficult.Despite the high passivation quality and the high conductivity of the material, neitherthe desired voltage nor a high fill factor could be achieved on solar cell level.The focus of this thesis is therefore on the systematic implementation of this layerstack in a silicon heterojunction solar cell. |