This title appears in the Scientific Report :
2022
Please use the identifier:
http://hdl.handle.net/2128/31120 in citations.
Please use the identifier: http://dx.doi.org/10.1109/TCSII.2022.3160304 in citations.
Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices
Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices
Memristors are promising nanoelectronic devices for the implementation of future AI-driven sensor-processor electronic systems, which are essential for the ongoing digitalization of our world. Accurate and computationally cost-effective models for the manufactured memristors are essential for the de...
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Personal Name(s): | Ntinas, Vasileios |
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Ascoli, Alon / Messaris, Ioannis / Wang, Yongmin / Rana, Vikas (Corresponding author) / Menzel, Stephan / Tetzlaff, Ronald | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA Institut Green IT; PGI-10 JARA-FIT; JARA-FIT |
Published in: | IEEE transactions on circuits and systems / 2, 69 (2022) 5, S. 2473 - 2477 |
Imprint: |
New York, NY
IEEE
2022
|
DOI: |
10.1109/TCSII.2022.3160304 |
Document Type: |
Journal Article |
Research Program: |
Advanced Computing Architectures Schnelle transiente, elektrische Analyse von resistiven Schaltphänomenen (B01) Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - Memristive Materials and Devices |
Link: |
OpenAccess Restricted |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1109/TCSII.2022.3160304 in citations.
Memristors are promising nanoelectronic devices for the implementation of future AI-driven sensor-processor electronic systems, which are essential for the ongoing digitalization of our world. Accurate and computationally cost-effective models for the manufactured memristors are essential for the design of such systems, especially for the simulation of large circuits. In this brief we address the simplification of the JART memristor model, a generic physics-based model of Valence Change Mechanism (VCM) memristors which accurately describes the dynamic behavior of fabricated memristor devices. Furthermore, the proposed model and simplification methodology have the potential to capture the dynamics of a wide range of memristor devices. Importantly, the implicit description of the current through the memristor is replaced by an explicit mathematical relationship. The proper reproduction of memristor dynamics, verified by applying the system-theoretic Dynamic Route Map (DRM) graphical analysis tool, applicable to first-order systems, can be observed through the proposed simplified model and enables the time-efficient simulation of large arrays of VCM devices. |