This title appears in the Scientific Report :
2022
Please use the identifier:
http://dx.doi.org/10.1021/acs.jpcc.2c06303 in citations.
Please use the identifier: http://hdl.handle.net/2128/32895 in citations.
Moisture Effect on the Threshold Switching of TOPO-Stabilized Sub-10 nm HfO 2 Nanocrystals in Nanoscale Devices
Moisture Effect on the Threshold Switching of TOPO-Stabilized Sub-10 nm HfO 2 Nanocrystals in Nanoscale Devices
The enduring demand for ever-increasing storage capacities inspires the development of new few nanometer-sized, high-performance memory devices. In this work, tri-n-octylphosphine oxide (TOPO)-stabilized sub-10 nm monoclinic HfO2 nanocrystals (NC) with a rod-like and spherical shape are synthesized...
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Personal Name(s): | Maiti, Sonam |
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Ohlerth, Thorsten / Schmidt, Niclas / Aussen, Stephan / Waser, Rainer / Simon, Ulrich / Karthäuser, Silvia (Corresponding author) | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA Institut Green IT; PGI-10 JARA-FIT; JARA-FIT |
Published in: |
The journal of physical chemistry |
Imprint: |
Washington, DC
Soc.
2022
|
DOI: |
10.1021/acs.jpcc.2c06303 |
Document Type: |
Journal Article |
Research Program: |
Memristive Materials and Devices |
Link: |
Get full text Published on 2022-10-23. Available in OpenAccess from 2023-10-23. Restricted |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/32895 in citations.
The enduring demand for ever-increasing storage capacities inspires the development of new few nanometer-sized, high-performance memory devices. In this work, tri-n-octylphosphine oxide (TOPO)-stabilized sub-10 nm monoclinic HfO2 nanocrystals (NC) with a rod-like and spherical shape are synthesized and used to build up microscale and nanoscale test devices. The electrical characterization of these devices studied by cyclic current–voltage measurements reveals a redox-like behavior in ambient atmosphere and volatile threshold switching in vacuum. By employing a thorough spectroscopic and surface analysis (FT-IR and NMR spectroscopy and XPS), the origin of this behavior was elucidated. While the redox behavior is enabled by residual moisture present during clean-up of the NC and thin film preparation, which leads to a partial desorption of TOPO from the NC surface, threshold switching is obtained for dry TOPO-stabilized HfO2 NC in microchannel as well as in nanoelectrode devices addressing only a few sub-10 nm TOPO-stabilized HfO2 NC. The results show that integration of sub-10 nm HfO2 NC in nanoscale devices is feasible to build up switching elements. |