This title appears in the Scientific Report :
2022
Please use the identifier:
http://hdl.handle.net/2128/32185 in citations.
Please use the identifier: http://dx.doi.org/10.1002/aelm.202200182 in citations.
A Deep Study of Resistance Switching Phenomena in TaO x ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification
A Deep Study of Resistance Switching Phenomena in TaO x ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification
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Personal Name(s): | Ascoli, Alon (Corresponding author) |
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Menzel, Stephan / Rana, Vikas / Kempen, Tim / Messaris, Ioannis / Demirkol, Ahmet Samil / Schulten, Michael / Siemon, Anne / Tetzlaff, Ronald | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA-FIT; JARA-FIT JARA Institut Green IT; PGI-10 |
Published in: | Advanced electronic materials, 8 (2022) 8, S. 2200182 - |
Imprint: |
Weinheim
Wiley-VCH Verlag GmbH & Co. KG
2022
|
DOI: |
10.1002/aelm.202200182 |
Document Type: |
Journal Article |
Research Program: |
Advanced Computing Architectures Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - Memristive Materials and Devices |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1002/aelm.202200182 in citations.
Description not available. |