This title appears in the Scientific Report :
2022
Please use the identifier:
http://dx.doi.org/10.1109/LED.2022.3185781 in citations.
Please use the identifier: http://hdl.handle.net/2128/32720 in citations.
Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature
Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature
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Personal Name(s): | Han, Yi |
---|---|
Sun, Jingxuan / Richstein, Benjamin / Allibert, Frederic / Radu, Ionut / Bae, Jin-Hee / Grutzmacher, Detlev / Knoch, Joachim / Zhao, Qing-Tai | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 |
Published in: | IEEE electron device letters, 43 (2022) 8, S. 1187 - 1190 |
Imprint: |
New York, NY
IEEE
2022
|
DOI: |
10.1109/LED.2022.3185781 |
Document Type: |
Journal Article |
Research Program: |
Kryogene CMOS Technologie für die Realisierung von von klassischen QuBit-Kontrollschaltkreisen Emerging NC Architectures |
Link: |
OpenAccess Restricted |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/32720 in citations.
Description not available. |