This title appears in the Scientific Report :
2022
Please use the identifier:
http://dx.doi.org/10.1016/j.flatc.2022.100447 in citations.
Please use the identifier: http://hdl.handle.net/2128/33343 in citations.
Nano-LED driven phase change evolution of layered chalcogenides for Raman spectroscopy investigations
Nano-LED driven phase change evolution of layered chalcogenides for Raman spectroscopy investigations
We present a device driving testing platform based on vertically integrated nano light emitting diodes (nano- LEDs). The nano-LEDs with a peak wavelength emission centered at ~ 445 nm were arranged in arrays and conditioned using a laser-micro-annealing process to individually tune their intensity....
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Personal Name(s): | Mikulics, Martin (Corresponding author) |
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Adam, Roman / Roman Sobolewski / Heidtfeld, Sarah / Cao, Derang / Bürgler, Daniel E. / Schneider, Claus M. / Mayer, Joachim / Hardtdegen, Hilde Helen (Corresponding author) | |
Contributing Institute: |
Materialwissenschaft u. Werkstofftechnik; ER-C-2 |
Published in: | FlatChem, 36 (2022) S. 100447 - |
Imprint: |
Amsterdam
Elsevier
2022
|
DOI: |
10.1016/j.flatc.2022.100447 |
Document Type: |
Journal Article |
Research Program: |
Understanding the Structural and Functional Behavior of Solid State Systems |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/33343 in citations.
We present a device driving testing platform based on vertically integrated nano light emitting diodes (nano- LEDs). The nano-LEDs with a peak wavelength emission centered at ~ 445 nm were arranged in arrays and conditioned using a laser-micro-annealing process to individually tune their intensity. They were coupled with freestanding monocrystalline Ge1Sb2Te4 nano-membranes with three different thicknesses (~40, ~ 60 and ~ 90 nm) with the aim of initializing ultrafast switching processes and of observing phase changed states simulta- neously by Raman spectroscopy. Raman spectroscopy studies reveal that the optical pulses emitted from the nano-LEDs induce substantial, local changes in the nano-membranes’ states of the Ge1Sb2Te4 layered material. Beside the crystalline state in non-exposed areas (as-grown material), amorphous and different intermediate states were identified in exposed areas as island-like structures with diameters ranging from ~ 300 nm up to ~ 1.5 µm. The latter confirms the nano-LEDs’ emission role in both near- and far-field regimes, depending on the distance between nano-LED and nano-membrane, for driving i.e. inducing the phase change process. The results presented demonstrate the suitability and potential of the vertically integrated nano-LEDs as the key components for a testing platform/for electro-optical convertors driving phase change processes in optically active media. They could also play an important role in the development of future, e.g., non-volatile data storage as well as in optical and neuromorphic computing architectures based on transmistor devices. |