This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1016/j.tsf.2008.11.049 in citations.
Evaluation of electron beam induced current profiles of Cu(In,Ga)Se2 solar cells with different Ga-contents
Evaluation of electron beam induced current profiles of Cu(In,Ga)Se2 solar cells with different Ga-contents
The measurement of electron beam induced current profiles in junction configuration (JEBIC) is a settled method for several semiconductor devices. We discuss the JEBIC method in the light of the special conditions present in the case of thin film Cu(In,Ga)Se-2 solar cells.Our previously published re...
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Personal Name(s): | Kniese, R. |
---|---|
Powalla, M. / Rau, U. | |
Contributing Institute: |
Photovoltaik; IEF-5 JARA-ENERGY; JARA-ENERGY |
Published in: | Thin solid films, 517 (2009) S. 2357 - 2359 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2009
|
Physical Description: |
2357 - 2359 |
DOI: |
10.1016/j.tsf.2008.11.049 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Thin Solid Films
517 |
Subject (ZB): | |
Publikationsportal JuSER |
The measurement of electron beam induced current profiles in junction configuration (JEBIC) is a settled method for several semiconductor devices. We discuss the JEBIC method in the light of the special conditions present in the case of thin film Cu(In,Ga)Se-2 solar cells.Our previously published results indicate that the charge state of defects close to or at the Cu(In,Ga)Se-2/CdS interface depends on the minority carrier distribution, which changes strongly during a scan of the cross section with an electron beam. The charge distribution influences the electrostatic potential and therewith the collection of minority carriers.Here, we present an evaluation method of JEBIC profiles that accounts for this effect. Monte Carlo simulations of the carrier generation help us to consider in detail the influence of surface recombination. We determine the diffusion length, space charge width, surface- and back contact recombination velocity of Cu(In(1-r),Ga-r)Se-2 devices with different Ga-contents r from JEBIC line scans. (C) 2009 Published by Elsevier B.V. |