This title appears in the Scientific Report :
2010
Please use the identifier:
http://dx.doi.org/10.1038/NMAT2748 in citations.
Complementary resistive switches for passive nanocrossbar memories Published online: 18 April 2010
Complementary resistive switches for passive nanocrossbar memories Published online: 18 April 2010
On the road towards higher memory density and computer performance, a significant improvement in energy efficiency constitutes the dominant goal in future information technology. Passive crossbar arrays of memristive elements were suggested a decade ago as non-volatile random access memories (RAM) a...
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Personal Name(s): | Linn, E. |
---|---|
Rosezin, R. / Kügeler, C. / Waser, R. | |
Contributing Institute: |
Elektronische Materialien; IFF-6 JARA-FIT; JARA-FIT |
Published in: | Nature materials, 9 (2010) S. 403 - 406 |
Imprint: |
Basingstoke
Nature Publishing Group
2010
|
Physical Description: |
403 - 406 |
PubMed ID: |
20400954 |
DOI: |
10.1038/NMAT2748 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Nature Materials
9 |
Subject (ZB): | |
Publikationsportal JuSER |
On the road towards higher memory density and computer performance, a significant improvement in energy efficiency constitutes the dominant goal in future information technology. Passive crossbar arrays of memristive elements were suggested a decade ago as non-volatile random access memories (RAM) and can also be used for reconfigurable logic circuits. As such they represent an interesting alternative to the conventional von Neumann based computer chip architectures. Crossbar architectures hold the promise of a significant reduction in energy consumption because of their ultimate scaling potential and because they allow for a local fusion of logic and memory, thus avoiding energy consumption by data transfer on the chip. However, the expected paradigm change has not yet taken place because the general problem of selecting a designated cell within a passive crossbar array without interference from sneak-path currents through neighbouring cells has not yet been solved satisfactorily. Here we introduce a complementary resistive switch. It consists of two antiserial memristive elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. |